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Organic nano-floating-gate transistor memory with metal nanoparticles

Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structu...

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Detalles Bibliográficos
Autores principales: Van Tho, Luu, Baeg, Kang-Jun, Noh, Yong-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Korea Nano Technology Research Society 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271145/
https://www.ncbi.nlm.nih.gov/pubmed/28191420
http://dx.doi.org/10.1186/s40580-016-0069-7
Descripción
Sumario:Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices. In this review, recent advances in the classes of nano-floating-gate OFET memory devices using metal nanoparticles as charge-trapping sites are briefly reviewed. Details of device fabrication, characterization, and operation mechanisms are reported based on recent research activities reported in the literature.