Accurate extraction of WSe2 FETs parameters by using pulsed I-V method at various temperatures

This work investigates the intrinsic characteristics of multilayer WSe(2) field effect transistors (FETs) by analysing Pulsed I-V (PIV) and DC characteristics measured at various temperatures. In DC measurement, unwanted charge trapping due to the gate bias stress results in I-V curves different fro...

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Detalles Bibliográficos
Autores principales: Lee, Sung Tae, Cho, In Tak, Kang, Won Mook, Park, Byung Gook, Lee, Jong-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Korea Nano Technology Research Society 2016
Materias:
Letters
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271170/
https://www.ncbi.nlm.nih.gov/pubmed/28191441
http://dx.doi.org/10.1186/s40580-016-0091-9

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