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Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment
[Image: see text] The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semi...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2017
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5286459/ https://www.ncbi.nlm.nih.gov/pubmed/28180187 http://dx.doi.org/10.1021/acsomega.6b00256 |
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author | Porrazzo, Rossella Luzio, Alessandro Bellani, Sebastiano Bonacchini, Giorgio Ernesto Noh, Yong-Young Kim, Yun-Hi Lanzani, Guglielmo Antognazza, Maria Rosa Caironi, Mario |
author_facet | Porrazzo, Rossella Luzio, Alessandro Bellani, Sebastiano Bonacchini, Giorgio Ernesto Noh, Yong-Young Kim, Yun-Hi Lanzani, Guglielmo Antognazza, Maria Rosa Caironi, Mario |
author_sort | Porrazzo, Rossella |
collection | PubMed |
description | [Image: see text] The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm(–2) in full accumulation and a mobility–capacitance product of 7 × 10(–3) μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation. |
format | Online Article Text |
id | pubmed-5286459 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-52864592017-02-06 Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment Porrazzo, Rossella Luzio, Alessandro Bellani, Sebastiano Bonacchini, Giorgio Ernesto Noh, Yong-Young Kim, Yun-Hi Lanzani, Guglielmo Antognazza, Maria Rosa Caironi, Mario ACS Omega [Image: see text] The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm(–2) in full accumulation and a mobility–capacitance product of 7 × 10(–3) μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation. American Chemical Society 2017-01-03 /pmc/articles/PMC5286459/ /pubmed/28180187 http://dx.doi.org/10.1021/acsomega.6b00256 Text en Copyright © 2017 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
spellingShingle | Porrazzo, Rossella Luzio, Alessandro Bellani, Sebastiano Bonacchini, Giorgio Ernesto Noh, Yong-Young Kim, Yun-Hi Lanzani, Guglielmo Antognazza, Maria Rosa Caironi, Mario Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment |
title | Water-Gated n-Type Organic Field-Effect Transistors
for Complementary Integrated
Circuits Operating in an Aqueous Environment |
title_full | Water-Gated n-Type Organic Field-Effect Transistors
for Complementary Integrated
Circuits Operating in an Aqueous Environment |
title_fullStr | Water-Gated n-Type Organic Field-Effect Transistors
for Complementary Integrated
Circuits Operating in an Aqueous Environment |
title_full_unstemmed | Water-Gated n-Type Organic Field-Effect Transistors
for Complementary Integrated
Circuits Operating in an Aqueous Environment |
title_short | Water-Gated n-Type Organic Field-Effect Transistors
for Complementary Integrated
Circuits Operating in an Aqueous Environment |
title_sort | water-gated n-type organic field-effect transistors
for complementary integrated
circuits operating in an aqueous environment |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5286459/ https://www.ncbi.nlm.nih.gov/pubmed/28180187 http://dx.doi.org/10.1021/acsomega.6b00256 |
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