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Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment

[Image: see text] The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semi...

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Autores principales: Porrazzo, Rossella, Luzio, Alessandro, Bellani, Sebastiano, Bonacchini, Giorgio Ernesto, Noh, Yong-Young, Kim, Yun-Hi, Lanzani, Guglielmo, Antognazza, Maria Rosa, Caironi, Mario
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5286459/
https://www.ncbi.nlm.nih.gov/pubmed/28180187
http://dx.doi.org/10.1021/acsomega.6b00256
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author Porrazzo, Rossella
Luzio, Alessandro
Bellani, Sebastiano
Bonacchini, Giorgio Ernesto
Noh, Yong-Young
Kim, Yun-Hi
Lanzani, Guglielmo
Antognazza, Maria Rosa
Caironi, Mario
author_facet Porrazzo, Rossella
Luzio, Alessandro
Bellani, Sebastiano
Bonacchini, Giorgio Ernesto
Noh, Yong-Young
Kim, Yun-Hi
Lanzani, Guglielmo
Antognazza, Maria Rosa
Caironi, Mario
author_sort Porrazzo, Rossella
collection PubMed
description [Image: see text] The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm(–2) in full accumulation and a mobility–capacitance product of 7 × 10(–3) μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.
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spelling pubmed-52864592017-02-06 Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment Porrazzo, Rossella Luzio, Alessandro Bellani, Sebastiano Bonacchini, Giorgio Ernesto Noh, Yong-Young Kim, Yun-Hi Lanzani, Guglielmo Antognazza, Maria Rosa Caironi, Mario ACS Omega [Image: see text] The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm(–2) in full accumulation and a mobility–capacitance product of 7 × 10(–3) μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation. American Chemical Society 2017-01-03 /pmc/articles/PMC5286459/ /pubmed/28180187 http://dx.doi.org/10.1021/acsomega.6b00256 Text en Copyright © 2017 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Porrazzo, Rossella
Luzio, Alessandro
Bellani, Sebastiano
Bonacchini, Giorgio Ernesto
Noh, Yong-Young
Kim, Yun-Hi
Lanzani, Guglielmo
Antognazza, Maria Rosa
Caironi, Mario
Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment
title Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment
title_full Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment
title_fullStr Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment
title_full_unstemmed Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment
title_short Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment
title_sort water-gated n-type organic field-effect transistors for complementary integrated circuits operating in an aqueous environment
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5286459/
https://www.ncbi.nlm.nih.gov/pubmed/28180187
http://dx.doi.org/10.1021/acsomega.6b00256
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