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Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy

The increasing integration of microelectronics into the submicrometer region for VHSIC and VLSI applications necessitates the examination of these structures both for linewidth measurement and defect inspection by systems other than the optical microscope. The low beam-voltage scanning electron micr...

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Detalles Bibliográficos
Autores principales: Postek, Michael T., Joy, David C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1987
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5286967/
http://dx.doi.org/10.6028/jres.092.018
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author Postek, Michael T.
Joy, David C.
author_facet Postek, Michael T.
Joy, David C.
author_sort Postek, Michael T.
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description The increasing integration of microelectronics into the submicrometer region for VHSIC and VLSI applications necessitates the examination of these structures both for linewidth measurement and defect inspection by systems other than the optical microscope. The low beam-voltage scanning electron microscope has been recently employed in this work due to its potentially high spatial resolution and large depth of field. This paper discusses applications of the scanning electron microscope to microelectronics inspection and metrology in light of the present instrument specifications and capabilities, and relates the scanning electron microscope to the controls required for submicrometer processing.
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spelling pubmed-52869672021-08-02 Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy Postek, Michael T. Joy, David C. J Res Natl Bur Stand (1977) Article The increasing integration of microelectronics into the submicrometer region for VHSIC and VLSI applications necessitates the examination of these structures both for linewidth measurement and defect inspection by systems other than the optical microscope. The low beam-voltage scanning electron microscope has been recently employed in this work due to its potentially high spatial resolution and large depth of field. This paper discusses applications of the scanning electron microscope to microelectronics inspection and metrology in light of the present instrument specifications and capabilities, and relates the scanning electron microscope to the controls required for submicrometer processing. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1987 1987-06-01 /pmc/articles/PMC5286967/ http://dx.doi.org/10.6028/jres.092.018 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Bureau of Standards is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Postek, Michael T.
Joy, David C.
Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy
title Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy
title_full Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy
title_fullStr Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy
title_full_unstemmed Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy
title_short Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy
title_sort submicrometer microelectronics dimensional metrology: scanning electron microscopy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5286967/
http://dx.doi.org/10.6028/jres.092.018
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