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High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications
The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The requir...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5288802/ https://www.ncbi.nlm.nih.gov/pubmed/28150807 http://dx.doi.org/10.1038/srep42001 |
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author | Chen, Jun-Yang Lau, Yong-Chang Coey, J. M. D. Li, Mo Wang, Jian-Ping |
author_facet | Chen, Jun-Yang Lau, Yong-Chang Coey, J. M. D. Li, Mo Wang, Jian-Ping |
author_sort | Chen, Jun-Yang |
collection | PubMed |
description | The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications. |
format | Online Article Text |
id | pubmed-5288802 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-52888022017-02-06 High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications Chen, Jun-Yang Lau, Yong-Chang Coey, J. M. D. Li, Mo Wang, Jian-Ping Sci Rep Article The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications. Nature Publishing Group 2017-02-02 /pmc/articles/PMC5288802/ /pubmed/28150807 http://dx.doi.org/10.1038/srep42001 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Chen, Jun-Yang Lau, Yong-Chang Coey, J. M. D. Li, Mo Wang, Jian-Ping High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications |
title | High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications |
title_full | High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications |
title_fullStr | High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications |
title_full_unstemmed | High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications |
title_short | High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications |
title_sort | high performance mgo-barrier magnetic tunnel junctions for flexible and wearable spintronic applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5288802/ https://www.ncbi.nlm.nih.gov/pubmed/28150807 http://dx.doi.org/10.1038/srep42001 |
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