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Ferroelectric symmetry-protected multibit memory cell

The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limi...

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Detalles Bibliográficos
Autores principales:	Baudry, Laurent, Lukyanchuk, Igor, Vinokur, Valerii M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5297243/ https://www.ncbi.nlm.nih.gov/pubmed/28176866 http://dx.doi.org/10.1038/srep42196

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