A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without...

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Autores principales: Zackriya, Mohammed, Kittur, Harish M., Chin, Albert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5301214/
https://www.ncbi.nlm.nih.gov/pubmed/28186147
http://dx.doi.org/10.1038/srep42375
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author Zackriya, Mohammed
Kittur, Harish M.
Chin, Albert
author_facet Zackriya, Mohammed
Kittur, Harish M.
Chin, Albert
author_sort Zackriya, Mohammed
collection PubMed
description The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.
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spelling pubmed-53012142017-02-13 A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array Zackriya, Mohammed Kittur, Harish M. Chin, Albert Sci Rep Article The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design. Nature Publishing Group 2017-02-10 /pmc/articles/PMC5301214/ /pubmed/28186147 http://dx.doi.org/10.1038/srep42375 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Zackriya, Mohammed
Kittur, Harish M.
Chin, Albert
A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array
title A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array
title_full A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array
title_fullStr A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array
title_full_unstemmed A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array
title_short A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array
title_sort novel read scheme for large size one-resistor resistive random access memory array
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5301214/
https://www.ncbi.nlm.nih.gov/pubmed/28186147
http://dx.doi.org/10.1038/srep42375
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