Impact of contact resistance on the electrical properties of MoS(2) transistors at practical operating temperatures

Molybdenum disulphide (MoS(2)) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resi...

Descripción completa

Detalles Bibliográficos
Autores principales: Giannazzo, Filippo, Fisichella, Gabriele, Piazza, Aurora, Di Franco, Salvatore, Greco, Giuseppe, Agnello, Simonpietro, Roccaforte, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2017
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5301949/
https://www.ncbi.nlm.nih.gov/pubmed/28243564
http://dx.doi.org/10.3762/bjnano.8.28

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5301949/
https://www.ncbi.nlm.nih.gov/pubmed/28243564
http://dx.doi.org/10.3762/bjnano.8.28

Ejemplares similares