Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance

This work proposes a novel geometry field effect transistor with graphene as a channel—graphene field-effect transistor (GFET), having a hybrid contact that consists of an ohmic source/drain and its extended part towards the gate, which is capacitively coupled to the channel. The ohmic contacts are...

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Detalles Bibliográficos
Autores principales: Al-Amin, Chowdhury, Karabiyik, Mustafa, Vabbina, Phani Kiran, Sinha, Raju, Pala, Nezih
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5302495/
https://www.ncbi.nlm.nih.gov/pubmed/28335214
http://dx.doi.org/10.3390/nano6050086

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5302495/
https://www.ncbi.nlm.nih.gov/pubmed/28335214
http://dx.doi.org/10.3390/nano6050086

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