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Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory
ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW–based memory cell with a Ti/ZnO/Ti structure was then fabricated to investi...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5302546/ https://www.ncbi.nlm.nih.gov/pubmed/28344273 http://dx.doi.org/10.3390/nano6010016 |
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author | Lai, Yunfeng Qiu, Wenbiao Zeng, Zecun Cheng, Shuying Yu, Jinling Zheng, Qiao |
author_facet | Lai, Yunfeng Qiu, Wenbiao Zeng, Zecun Cheng, Shuying Yu, Jinling Zheng, Qiao |
author_sort | Lai, Yunfeng |
collection | PubMed |
description | ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW–based memory cell with a Ti/ZnO/Ti structure was then fabricated to investigate the effects of plasma treatment on the resistive switching. The plasma treatment improves the homogeneity and reproducibility of the resistive switching of the ZnO NWs, and it also reduces the switching (set and reset) voltages with less fluctuations, which would be associated with the increased density of oxygen vacancies to facilitate the resistive switching as well as to average out the stochastic movement of individual oxygen vacancies. Additionally, a single ZnO NW–based memory cell with self-rectification could also be obtained, if the inhomogeneous plasma treatment is applied to the two Ti/ZnO contacts. The plasma-induced oxygen vacancy disabling the rectification capability at one of the Ti/ZnO contacts is believed to be responsible for the self-rectification in the memory cell. |
format | Online Article Text |
id | pubmed-5302546 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-53025462017-03-21 Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory Lai, Yunfeng Qiu, Wenbiao Zeng, Zecun Cheng, Shuying Yu, Jinling Zheng, Qiao Nanomaterials (Basel) Article ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW–based memory cell with a Ti/ZnO/Ti structure was then fabricated to investigate the effects of plasma treatment on the resistive switching. The plasma treatment improves the homogeneity and reproducibility of the resistive switching of the ZnO NWs, and it also reduces the switching (set and reset) voltages with less fluctuations, which would be associated with the increased density of oxygen vacancies to facilitate the resistive switching as well as to average out the stochastic movement of individual oxygen vacancies. Additionally, a single ZnO NW–based memory cell with self-rectification could also be obtained, if the inhomogeneous plasma treatment is applied to the two Ti/ZnO contacts. The plasma-induced oxygen vacancy disabling the rectification capability at one of the Ti/ZnO contacts is believed to be responsible for the self-rectification in the memory cell. MDPI 2016-01-13 /pmc/articles/PMC5302546/ /pubmed/28344273 http://dx.doi.org/10.3390/nano6010016 Text en © 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons by Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lai, Yunfeng Qiu, Wenbiao Zeng, Zecun Cheng, Shuying Yu, Jinling Zheng, Qiao Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory |
title | Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory |
title_full | Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory |
title_fullStr | Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory |
title_full_unstemmed | Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory |
title_short | Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory |
title_sort | resistive switching of plasma–treated zinc oxide nanowires for resistive random access memory |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5302546/ https://www.ncbi.nlm.nih.gov/pubmed/28344273 http://dx.doi.org/10.3390/nano6010016 |
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