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Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory

ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW–based memory cell with a Ti/ZnO/Ti structure was then fabricated to investi...

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Detalles Bibliográficos
Autores principales:	Lai, Yunfeng, Qiu, Wenbiao, Zeng, Zecun, Cheng, Shuying, Yu, Jinling, Zheng, Qiao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5302546/ https://www.ncbi.nlm.nih.gov/pubmed/28344273 http://dx.doi.org/10.3390/nano6010016

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