The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities

Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temper...

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Detalles Bibliográficos
Autores principales: Shan, Dan, Qian, Mingqing, Ji, Yang, Jiang, Xiaofan, Xu, Jun, Chen, Kunji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5302707/
https://www.ncbi.nlm.nih.gov/pubmed/28335362
http://dx.doi.org/10.3390/nano6120233

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5302707/
https://www.ncbi.nlm.nih.gov/pubmed/28335362
http://dx.doi.org/10.3390/nano6120233

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