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The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities
Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temper...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5302707/ https://www.ncbi.nlm.nih.gov/pubmed/28335362 http://dx.doi.org/10.3390/nano6120233 |