Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth

We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features o...

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Autores principales: Lin, Chuan-Fu, Kan, Hung-Chih, Kanakaraju, Subramaniam, Richardson, Christopher, Phaneuf, Raymond
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304676/
https://www.ncbi.nlm.nih.gov/pubmed/28344227
http://dx.doi.org/10.3390/nano4020344
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author Lin, Chuan-Fu
Kan, Hung-Chih
Kanakaraju, Subramaniam
Richardson, Christopher
Phaneuf, Raymond
author_facet Lin, Chuan-Fu
Kan, Hung-Chih
Kanakaraju, Subramaniam
Richardson, Christopher
Phaneuf, Raymond
author_sort Lin, Chuan-Fu
collection PubMed
description We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced.
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spelling pubmed-53046762017-03-21 Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth Lin, Chuan-Fu Kan, Hung-Chih Kanakaraju, Subramaniam Richardson, Christopher Phaneuf, Raymond Nanomaterials (Basel) Article We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced. MDPI 2014-05-12 /pmc/articles/PMC5304676/ /pubmed/28344227 http://dx.doi.org/10.3390/nano4020344 Text en © 2014 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Lin, Chuan-Fu
Kan, Hung-Chih
Kanakaraju, Subramaniam
Richardson, Christopher
Phaneuf, Raymond
Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth
title Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth
title_full Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth
title_fullStr Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth
title_full_unstemmed Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth
title_short Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth
title_sort directed kinetic self-assembly of mounds on patterned gaas (001): tunable arrangement, pattern amplification and self-limiting growth
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304676/
https://www.ncbi.nlm.nih.gov/pubmed/28344227
http://dx.doi.org/10.3390/nano4020344
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