Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-h...

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Detalles Bibliográficos
Autores principales: Liu, Yan, Niu, Jiebin, Wang, Hongjuan, Han, Genquan, Zhang, Chunfu, Feng, Qian, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5313395/
https://www.ncbi.nlm.nih.gov/pubmed/28228005
http://dx.doi.org/10.1186/s11671-017-1913-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5313395/
https://www.ncbi.nlm.nih.gov/pubmed/28228005
http://dx.doi.org/10.1186/s11671-017-1913-3

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