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New type of quantum spin Hall insulators in hydrogenated PbSn thin films

The realization of a quantum spin Hall (QSH) insulator working at high temperature is of both scientific and technical interest since it supports spin-polarized and dssipationless edge states. Based on first-principle calculations, we predicted that the two-dimensional (2D) binary compound of lead a...

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Detalles Bibliográficos
Autores principales: Liu, Liang, Qin, Hongwei, Hu, Jifan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5316964/
https://www.ncbi.nlm.nih.gov/pubmed/28218297
http://dx.doi.org/10.1038/srep42410
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author Liu, Liang
Qin, Hongwei
Hu, Jifan
author_facet Liu, Liang
Qin, Hongwei
Hu, Jifan
author_sort Liu, Liang
collection PubMed
description The realization of a quantum spin Hall (QSH) insulator working at high temperature is of both scientific and technical interest since it supports spin-polarized and dssipationless edge states. Based on first-principle calculations, we predicted that the two-dimensional (2D) binary compound of lead and tin (PbSn) in a buckled honeycomb framework can be tuned into a topological insulator with huge a band gap and structural stability via hydrogenation or growth on special substrates. This heavy-element-based structure is sufficiently ductile to survive the 18 ps molecular dynamics (MD) annealing to 400 K, and the band gap opened by strong spin-orbital-coupling (SOC) is as large as 0.7 eV. These characteristics indicate that hydrogenated PbSn (H-PbSn) is an excellent platform for QSH realization at high temperature.
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spelling pubmed-53169642017-02-24 New type of quantum spin Hall insulators in hydrogenated PbSn thin films Liu, Liang Qin, Hongwei Hu, Jifan Sci Rep Article The realization of a quantum spin Hall (QSH) insulator working at high temperature is of both scientific and technical interest since it supports spin-polarized and dssipationless edge states. Based on first-principle calculations, we predicted that the two-dimensional (2D) binary compound of lead and tin (PbSn) in a buckled honeycomb framework can be tuned into a topological insulator with huge a band gap and structural stability via hydrogenation or growth on special substrates. This heavy-element-based structure is sufficiently ductile to survive the 18 ps molecular dynamics (MD) annealing to 400 K, and the band gap opened by strong spin-orbital-coupling (SOC) is as large as 0.7 eV. These characteristics indicate that hydrogenated PbSn (H-PbSn) is an excellent platform for QSH realization at high temperature. Nature Publishing Group 2017-02-20 /pmc/articles/PMC5316964/ /pubmed/28218297 http://dx.doi.org/10.1038/srep42410 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Liu, Liang
Qin, Hongwei
Hu, Jifan
New type of quantum spin Hall insulators in hydrogenated PbSn thin films
title New type of quantum spin Hall insulators in hydrogenated PbSn thin films
title_full New type of quantum spin Hall insulators in hydrogenated PbSn thin films
title_fullStr New type of quantum spin Hall insulators in hydrogenated PbSn thin films
title_full_unstemmed New type of quantum spin Hall insulators in hydrogenated PbSn thin films
title_short New type of quantum spin Hall insulators in hydrogenated PbSn thin films
title_sort new type of quantum spin hall insulators in hydrogenated pbsn thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5316964/
https://www.ncbi.nlm.nih.gov/pubmed/28218297
http://dx.doi.org/10.1038/srep42410
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