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Anomalous resistivity upturn in epitaxial L2(1)-Co(2)MnAl films

Despite of the great scientific and technology interest, highly ordered full-Heusler L2(1)-Co(2)MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L2(1)-Co(2)MnA...

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Detalles Bibliográficos
Autores principales: Zhu, L. J., Zhao, J. H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5317171/
https://www.ncbi.nlm.nih.gov/pubmed/28218300
http://dx.doi.org/10.1038/srep42931
Descripción
Sumario:Despite of the great scientific and technology interest, highly ordered full-Heusler L2(1)-Co(2)MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L2(1)-Co(2)MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T(1/2) dependence, a robust independence of magnetic fields, and a close relevance to structural disorder. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the origin of the resistivity upturn.