Relaxation Modes for Trapped Crystal Point Defects

Group representation theory is applied to the problem of calculating the relaxation modes of a point defect trapped near an impurity atom or other defect in a crystal, where more than one set of neighboring sites is available to the point defect. For illustration, the case of a cation vacancy trappe...

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Detalles Bibliográficos
Autor principal: Franklin, A. D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1963
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5317222/
https://www.ncbi.nlm.nih.gov/pubmed/31580566
http://dx.doi.org/10.6028/jres.067A.030
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author Franklin, A. D.
author_facet Franklin, A. D.
author_sort Franklin, A. D.
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description Group representation theory is applied to the problem of calculating the relaxation modes of a point defect trapped near an impurity atom or other defect in a crystal, where more than one set of neighboring sites is available to the point defect. For illustration, the case of a cation vacancy trapped near a divalent impurity in the sodium chloride lattice is treated, including nearest- and next-nearest-neighbor sites.
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spelling pubmed-53172222019-10-01 Relaxation Modes for Trapped Crystal Point Defects Franklin, A. D. J Res Natl Bur Stand A Phys Chem Article Group representation theory is applied to the problem of calculating the relaxation modes of a point defect trapped near an impurity atom or other defect in a crystal, where more than one set of neighboring sites is available to the point defect. For illustration, the case of a cation vacancy trapped near a divalent impurity in the sodium chloride lattice is treated, including nearest- and next-nearest-neighbor sites. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1963 1963-08-01 /pmc/articles/PMC5317222/ /pubmed/31580566 http://dx.doi.org/10.6028/jres.067A.030 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Bureau of Standards Section A is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Franklin, A. D.
Relaxation Modes for Trapped Crystal Point Defects
title Relaxation Modes for Trapped Crystal Point Defects
title_full Relaxation Modes for Trapped Crystal Point Defects
title_fullStr Relaxation Modes for Trapped Crystal Point Defects
title_full_unstemmed Relaxation Modes for Trapped Crystal Point Defects
title_short Relaxation Modes for Trapped Crystal Point Defects
title_sort relaxation modes for trapped crystal point defects
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5317222/
https://www.ncbi.nlm.nih.gov/pubmed/31580566
http://dx.doi.org/10.6028/jres.067A.030
work_keys_str_mv AT franklinad relaxationmodesfortrappedcrystalpointdefects

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