Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the...

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Autores principales: Izhnin, Ihor I., Fitsych, Olena I., Pishchagin, Anton A., Kokhanenko, Andrei P., Voitsekhovskii, Alexander V., Dzyadukh, Stanislav M., Nikiforov, Alexander I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318315/
https://www.ncbi.nlm.nih.gov/pubmed/28235368
http://dx.doi.org/10.1186/s11671-017-1916-0
_version_ 1782509156384636928
author Izhnin, Ihor I.
Fitsych, Olena I.
Pishchagin, Anton A.
Kokhanenko, Andrei P.
Voitsekhovskii, Alexander V.
Dzyadukh, Stanislav M.
Nikiforov, Alexander I.
author_facet Izhnin, Ihor I.
Fitsych, Olena I.
Pishchagin, Anton A.
Kokhanenko, Andrei P.
Voitsekhovskii, Alexander V.
Dzyadukh, Stanislav M.
Nikiforov, Alexander I.
author_sort Izhnin, Ihor I.
collection PubMed
description This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that the second peak is broadened and corresponds to a system of closely lying energy levels.
format Online
Article
Text
id pubmed-5318315
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-53183152017-03-03 Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots Izhnin, Ihor I. Fitsych, Olena I. Pishchagin, Anton A. Kokhanenko, Andrei P. Voitsekhovskii, Alexander V. Dzyadukh, Stanislav M. Nikiforov, Alexander I. Nanoscale Res Lett Nano Express This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that the second peak is broadened and corresponds to a system of closely lying energy levels. Springer US 2017-02-20 /pmc/articles/PMC5318315/ /pubmed/28235368 http://dx.doi.org/10.1186/s11671-017-1916-0 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Izhnin, Ihor I.
Fitsych, Olena I.
Pishchagin, Anton A.
Kokhanenko, Andrei P.
Voitsekhovskii, Alexander V.
Dzyadukh, Stanislav M.
Nikiforov, Alexander I.
Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots
title Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots
title_full Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots
title_fullStr Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots
title_full_unstemmed Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots
title_short Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots
title_sort temperature spectra of conductance of ge/si p-i-n structures with ge quantum dots
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318315/
https://www.ncbi.nlm.nih.gov/pubmed/28235368
http://dx.doi.org/10.1186/s11671-017-1916-0
work_keys_str_mv AT izhninihori temperaturespectraofconductanceofgesipinstructureswithgequantumdots
AT fitsycholenai temperaturespectraofconductanceofgesipinstructureswithgequantumdots
AT pishchaginantona temperaturespectraofconductanceofgesipinstructureswithgequantumdots
AT kokhanenkoandreip temperaturespectraofconductanceofgesipinstructureswithgequantumdots
AT voitsekhovskiialexanderv temperaturespectraofconductanceofgesipinstructureswithgequantumdots
AT dzyadukhstanislavm temperaturespectraofconductanceofgesipinstructureswithgequantumdots
AT nikiforovalexanderi temperaturespectraofconductanceofgesipinstructureswithgequantumdots

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