Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the...

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Detalles Bibliográficos
Autores principales: Izhnin, Ihor I., Fitsych, Olena I., Pishchagin, Anton A., Kokhanenko, Andrei P., Voitsekhovskii, Alexander V., Dzyadukh, Stanislav M., Nikiforov, Alexander I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318315/
https://www.ncbi.nlm.nih.gov/pubmed/28235368
http://dx.doi.org/10.1186/s11671-017-1916-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318315/
https://www.ncbi.nlm.nih.gov/pubmed/28235368
http://dx.doi.org/10.1186/s11671-017-1916-0

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