Cargando…

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the...

Descripción completa

Detalles Bibliográficos
Autores principales:	Izhnin, Ihor I., Fitsych, Olena I., Pishchagin, Anton A., Kokhanenko, Andrei P., Voitsekhovskii, Alexander V., Dzyadukh, Stanislav M., Nikiforov, Alexander I.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2017
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318315/ https://www.ncbi.nlm.nih.gov/pubmed/28235368 http://dx.doi.org/10.1186/s11671-017-1916-0

Ejemplares similares

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
por: Yuryev, Vladimir A, et al.
Publicado: (2012)

Initial stage growth of Ge(x)Si(1−x) layers and Ge quantum dot formation on Ge(x)Si(1−x) surface by MBE
por: Nikiforov, Aleksandr I, et al.
Publicado: (2012)

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells
por: Izhnin, Ihor I., et al.
Publicado: (2016)

Electromodulated reflectance study of self-assembled Ge/Si quantum dots
por: Yakimov, Andrew, et al.
Publicado: (2011)

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
por: Yakimov, Andrew, et al.
Publicado: (2013)

Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis
por: Lozovoy, Kirill A., et al.
Publicado: (2022)

Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive atomic force microscopy
por: Zhang, Yifei, et al.
Publicado: (2012)

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
por: Cui, Jian, et al.
Publicado: (2010)

Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem
por: Ye, F. F., et al.
Publicado: (2015)

Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)
por: Yakimov, Andrew, et al.
Publicado: (2012)

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
por: Al-Saigh, Reem, et al.
Publicado: (2018)

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
por: Liu, Zhi, et al.
Publicado: (2012)

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
por: Mashanov, Vladimir, et al.
Publicado: (2011)

A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation
por: Jiang, Ming, et al.
Publicado: (2018)

Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors
por: Yakimov, Andrew, et al.
Publicado: (2014)

Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits
por: Grydlik, Martyna, et al.
Publicado: (2012)

The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation
por: Wang, Ching-Chi, et al.
Publicado: (2013)

Optical and Vibrational Spectra of CsCl-Enriched GeS(2)-Ga(2)S(3) Glasses
por: Klym, Halyna, et al.
Publicado: (2016)

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers
por: Timofeev, Vyacheslav, et al.
Publicado: (2018)

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
por: Talalaev, VG, et al.
Publicado: (2006)

Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy
por: Lv, Yi, et al.
Publicado: (2012)

Ordered GeSi nanorings grown on patterned Si (001) substrates
por: Ma, Yingjie, et al.
Publicado: (2011)

A Unique Approach to Generate Self-Aligned SiO(2)/Ge/SiO(2)/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step
por: Lai, Wei-Ting, et al.
Publicado: (2015)

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
por: Yuryev, Vladimir A, et al.
Publicado: (2011)

Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
por: Picco, Andrea, et al.
Publicado: (2012)

Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
por: Huang, Zhong-Mei, et al.
Publicado: (2016)

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires
por: Potié, Alexis, et al.
Publicado: (2011)

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate
por: Li, Wei, et al.
Publicado: (2017)

Kinetics of Si and Ge nanowires growth through electron beam evaporation
por: Artoni, Pietro, et al.
Publicado: (2011)

Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
por: Chen, Jiann-Lin, et al.
Publicado: (2018)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
por: Brehm, Moritz, et al.
Publicado: (2011)

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography
por: Chang, Hung-Tai, et al.
Publicado: (2013)

Morphology control and optical properties of SiGe nanostructures grown on glass substrate
por: Chang, Hsu-Kai, et al.
Publicado: (2012)

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
por: Zhao, Yiqun, et al.
Publicado: (2020)

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
por: Pezzoli, F, et al.
Publicado: (2009)

A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
por: Zhong, Zhenyang, et al.
Publicado: (2011)

Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C
por: Storozhevykh, Mikhail S., et al.
Publicado: (2015)

High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
por: Liu, Huan, et al.
Publicado: (2019)

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
por: Chen, Shupeng, et al.
Publicado: (2020)

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
por: Wang, Rui, et al.
Publicado: (2007)

Cannot write session to /tmp/vufind_sessions/sess_a4kq8g8ulbms7gtj92dl5dq729