Multicolor light-emitting devices with Tb(2)O(3) on silicon

Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb(2)O(3) on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the c...

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Detalles Bibliográficos
Autores principales: Li, Ling, Wang, Shenwei, Mu, Guangyao, Yin, Xue, Yi, Lixin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318990/
https://www.ncbi.nlm.nih.gov/pubmed/28220809
http://dx.doi.org/10.1038/srep42479
Descripción
Sumario:Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb(2)O(3) on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb(3+) ions in Tb(2)O(3). The electroluminescence mechanisms of the Tb(2)O(3) light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu(3+), Sm(3+) and Yb(3+)) doped Tb(2)O(3) light-emitting devices.

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