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Multicolor light-emitting devices with Tb(2)O(3) on silicon

Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb(2)O(3) on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the c...

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Detalles Bibliográficos
Autores principales: Li, Ling, Wang, Shenwei, Mu, Guangyao, Yin, Xue, Yi, Lixin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318990/
https://www.ncbi.nlm.nih.gov/pubmed/28220809
http://dx.doi.org/10.1038/srep42479
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author Li, Ling
Wang, Shenwei
Mu, Guangyao
Yin, Xue
Yi, Lixin
author_facet Li, Ling
Wang, Shenwei
Mu, Guangyao
Yin, Xue
Yi, Lixin
author_sort Li, Ling
collection PubMed
description Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb(2)O(3) on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb(3+) ions in Tb(2)O(3). The electroluminescence mechanisms of the Tb(2)O(3) light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu(3+), Sm(3+) and Yb(3+)) doped Tb(2)O(3) light-emitting devices.
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spelling pubmed-53189902017-02-24 Multicolor light-emitting devices with Tb(2)O(3) on silicon Li, Ling Wang, Shenwei Mu, Guangyao Yin, Xue Yi, Lixin Sci Rep Article Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb(2)O(3) on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb(3+) ions in Tb(2)O(3). The electroluminescence mechanisms of the Tb(2)O(3) light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu(3+), Sm(3+) and Yb(3+)) doped Tb(2)O(3) light-emitting devices. Nature Publishing Group 2017-02-21 /pmc/articles/PMC5318990/ /pubmed/28220809 http://dx.doi.org/10.1038/srep42479 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Li, Ling
Wang, Shenwei
Mu, Guangyao
Yin, Xue
Yi, Lixin
Multicolor light-emitting devices with Tb(2)O(3) on silicon
title Multicolor light-emitting devices with Tb(2)O(3) on silicon
title_full Multicolor light-emitting devices with Tb(2)O(3) on silicon
title_fullStr Multicolor light-emitting devices with Tb(2)O(3) on silicon
title_full_unstemmed Multicolor light-emitting devices with Tb(2)O(3) on silicon
title_short Multicolor light-emitting devices with Tb(2)O(3) on silicon
title_sort multicolor light-emitting devices with tb(2)o(3) on silicon
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318990/
https://www.ncbi.nlm.nih.gov/pubmed/28220809
http://dx.doi.org/10.1038/srep42479
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