Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolu...

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Detalles Bibliográficos
Autores principales: Wang, Xiao, Zhang, Guozhen, Xu, Yang, Wu, Hao, Liu, Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5321641/
https://www.ncbi.nlm.nih.gov/pubmed/28235380
http://dx.doi.org/10.1186/s11671-017-1924-0
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author Wang, Xiao
Zhang, Guozhen
Xu, Yang
Wu, Hao
Liu, Chang
author_facet Wang, Xiao
Zhang, Guozhen
Xu, Yang
Wu, Hao
Liu, Chang
author_sort Wang, Xiao
collection PubMed
description InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current–voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 10(3) at 2 V. This work offers a potential way to grow transferable devices with improving performances.
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spelling pubmed-53216412017-03-07 Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates Wang, Xiao Zhang, Guozhen Xu, Yang Wu, Hao Liu, Chang Nanoscale Res Lett Nano Express InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current–voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 10(3) at 2 V. This work offers a potential way to grow transferable devices with improving performances. Springer US 2017-02-23 /pmc/articles/PMC5321641/ /pubmed/28235380 http://dx.doi.org/10.1186/s11671-017-1924-0 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Wang, Xiao
Zhang, Guozhen
Xu, Yang
Wu, Hao
Liu, Chang
Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates
title Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates
title_full Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates
title_fullStr Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates
title_full_unstemmed Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates
title_short Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates
title_sort selective-area growth of transferable inn nanocolumns by using anodic aluminum oxide nanotemplates
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5321641/
https://www.ncbi.nlm.nih.gov/pubmed/28235380
http://dx.doi.org/10.1186/s11671-017-1924-0
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