Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se(2) absorber based thin film photovoltaic cell

The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simu...

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Detalles Bibliográficos
Autores principales: Asaduzzaman, Md., Bahar, Ali Newaz, Bhuiyan, Mohammad Maksudur Rahman
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2017
Materias:
Data Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5328687/
https://www.ncbi.nlm.nih.gov/pubmed/28275663
http://dx.doi.org/10.1016/j.dib.2017.02.020
Descripción
Sumario:The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage [Formula: see text] , short circuit current density [Formula: see text] , fill factor [Formula: see text] , efficiency [Formula: see text] , and collection efficiency [Formula: see text] have been analyzed.

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