Transfer free graphene growth on SiO(2) substrate at 250 °C

Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO(2) covered Si (SiO(2)/Si) substrate at 250 °C based on a solid-liqu...

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Detalles Bibliográficos
Autores principales: Vishwakarma, Riteshkumar, Rosmi, Mohamad Saufi, Takahashi, Kazunari, Wakamatsu, Yuji, Yaakob, Yazid, Araby, Mona Ibrahim, Kalita, Golap, Kitazawa, Masashi, Tanemura, Masaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5333118/
https://www.ncbi.nlm.nih.gov/pubmed/28251997
http://dx.doi.org/10.1038/srep43756

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5333118/
https://www.ncbi.nlm.nih.gov/pubmed/28251997
http://dx.doi.org/10.1038/srep43756

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