Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO(2) stack structure via work function depth profiling

We demonstrated that a flat band voltage (V(FB)) shift could be controlled in TiN/(LaO or ZrO)/SiO(2) stack structures. The V(FB) shift described in term of metal diffusion into the TiN film and silicate formation in the inserted (LaO or ZrO)/SiO(2) interface layer. The metal doping and silicate for...

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Detalles Bibliográficos
Autores principales: Heo, Sung, Park, Hyoungsun, Ko, Dong-Su, Kim, Yong Su, Kyoung, Yong Koo, Lee, Hyung-Ik, Cho, Eunae, Lee, Hyo Sug, Park, Gyung-Su, Shin, Jai Kwang, Lee, Dongjin, Lee, Jieun, Jung, Kyoungho, Jeong, Moonyoung, Yamada, Satoru, Kang, Hee Jae, Choi, Byoung-Deog
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5333133/
https://www.ncbi.nlm.nih.gov/pubmed/28252013
http://dx.doi.org/10.1038/srep43561

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5333133/
https://www.ncbi.nlm.nih.gov/pubmed/28252013
http://dx.doi.org/10.1038/srep43561

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