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High-speed maskless nanolithography with visible light based on photothermal localization
High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (λ = 405 nm), and on a large sample disk of diameter 120 mm. The normal width of the written features measures 46 ± 5 nm, about 1/...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5333155/ https://www.ncbi.nlm.nih.gov/pubmed/28252011 http://dx.doi.org/10.1038/srep43892 |