Cargando…
A Low-G Silicon Inertial Micro-Switch with Enhanced Contact Effect Using Squeeze-Film Damping
Contact time is one of the most important properties for inertial micro-switches. However, it is usually less than 20 μs for the switch with rigid electrode, which is difficult for the external circuit to recognize. This issue is traditionally addressed by designing the switch with a keep-close func...
Autores principales: | Peng, Yingchun, Wen, Zhiyu, Li, Dongling, Shang, Zhengguo |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5336041/ https://www.ncbi.nlm.nih.gov/pubmed/28212325 http://dx.doi.org/10.3390/s17020387 |
Ejemplares similares
-
Simulation Study of Inertial Micro-Switch as Influenced by Squeeze-Film Damping and Applied Acceleration Load
por: Peng, Yingchun, et al.
Publicado: (2016) -
A 5 g Inertial Micro-Switch with Enhanced Threshold Accuracy Using Squeeze-Film Damping
por: Peng, Yingchun, et al.
Publicado: (2018) -
An Analytical Model for Squeeze-Film Damping of Perforated Torsional Microplates Resonators
por: Li, Pu, et al.
Publicado: (2015) -
Squeeze Film Air Damping in Tapping Mode Atomic Force Microscopy
por: Zhao, Yang, et al.
Publicado: (2017) -
Investigation of a complete squeeze-film damping model for MEMS devices
por: Lu, Qianbo, et al.
Publicado: (2021)