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Surface State-Dominated Photoconduction and THz Generation in Topological Bi(2)Te(2)Se Nanowires

[Image: see text] Topological insulators constitute a fascinating class of quantum materials with nontrivial, gapless states on the surface and insulating bulk states. By revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate that the long surface lifeti...

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Detalles Bibliográficos
Autores principales: Seifert, Paul, Vaklinova, Kristina, Kern, Klaus, Burghard, Marko, Holleitner, Alexander
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5338589/
https://www.ncbi.nlm.nih.gov/pubmed/28081604
http://dx.doi.org/10.1021/acs.nanolett.6b04312
Descripción
Sumario:[Image: see text] Topological insulators constitute a fascinating class of quantum materials with nontrivial, gapless states on the surface and insulating bulk states. By revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate that the long surface lifetime of Bi(2)Te(2)Se nanowires allows us to access the surface states by a pulsed photoconduction scheme and that there is a prevailing bolometric response of the surface states. The interplay of the surface and bulk states dynamics on the different time scales gives rise to a surprising physical property of Bi(2)Te(2)Se nanowires: their pulsed photoconductance changes polarity as a function of laser power. Moreover, we show that single Bi(2)Te(2)Se nanowires can be used as THz generators for on-chip high-frequency circuits at room temperature. Our results open the avenue for single Bi(2)Te(2)Se nanowires as active modules in optoelectronic high-frequency and THz circuits.