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Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes

Considering the effect of both the buffer layer and substrate, a series of ultrathin multilayered structure cathodes (UTMC) is constructed to simulate the field emission (FE) process of nanostructured semiconductor film cathodes (NSFCs). We find a generalized FE mechanism of the NSFCs, in which ther...

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Detalles Bibliográficos
Autores principales: Wang, Ru-Zhi, Zhao, Wei, Yan, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5343652/
http://dx.doi.org/10.1038/srep43625
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author Wang, Ru-Zhi
Zhao, Wei
Yan, Hui
author_facet Wang, Ru-Zhi
Zhao, Wei
Yan, Hui
author_sort Wang, Ru-Zhi
collection PubMed
description Considering the effect of both the buffer layer and substrate, a series of ultrathin multilayered structure cathodes (UTMC) is constructed to simulate the field emission (FE) process of nanostructured semiconductor film cathodes (NSFCs). We find a generalized FE mechanism of the NSFCs, in which there are three distinct FE modes with the change of the applied field. Our results clearly show significant differences of FE between conventional emitters and nanofilm emitters, which the non-Fowler-Nordheim characteristics and the resonant FE will be inevitable for NSFCs. Moreover, the controllable FE can be realized by fine-tuning the quantum structure of NSFCs. The generalized mechanism of NSFCs presented here may be particularly useful for design high-speed and high-frequency vacuum nano-electronic devices.
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spelling pubmed-53436522017-03-14 Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes Wang, Ru-Zhi Zhao, Wei Yan, Hui Sci Rep Article Considering the effect of both the buffer layer and substrate, a series of ultrathin multilayered structure cathodes (UTMC) is constructed to simulate the field emission (FE) process of nanostructured semiconductor film cathodes (NSFCs). We find a generalized FE mechanism of the NSFCs, in which there are three distinct FE modes with the change of the applied field. Our results clearly show significant differences of FE between conventional emitters and nanofilm emitters, which the non-Fowler-Nordheim characteristics and the resonant FE will be inevitable for NSFCs. Moreover, the controllable FE can be realized by fine-tuning the quantum structure of NSFCs. The generalized mechanism of NSFCs presented here may be particularly useful for design high-speed and high-frequency vacuum nano-electronic devices. Nature Publishing Group 2017-03-08 /pmc/articles/PMC5343652/ http://dx.doi.org/10.1038/srep43625 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Wang, Ru-Zhi
Zhao, Wei
Yan, Hui
Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes
title Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes
title_full Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes
title_fullStr Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes
title_full_unstemmed Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes
title_short Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes
title_sort generalized mechanism of field emission from nanostructured semiconductor film cathodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5343652/
http://dx.doi.org/10.1038/srep43625
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