Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain

We report on the mechanical fatigue behavior of printed, organic, thin-film transistors (OTFTs) based on a polymer semiconductor, investigated by repeatedly applying strain to the flexible OTFT devices and assessing their electrical characteristics after 60,000 bending cycles. As part of our investi...

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Detalles Bibliográficos
Autores principales: Sekine, Tomohito, Kumaki, Daisuke, Tokito, Shizuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344584/
https://www.ncbi.nlm.nih.gov/pubmed/28772377
http://dx.doi.org/10.3390/ma10010018
Descripción
Sumario:We report on the mechanical fatigue behavior of printed, organic, thin-film transistors (OTFTs) based on a polymer semiconductor, investigated by repeatedly applying strain to the flexible OTFT devices and assessing their electrical characteristics after 60,000 bending cycles. As part of our investigation, we established that the rates of reduction in source/drain currents in the OTFT device depended on bending directions. Our improved understanding of the mechanical fatigue behavior of the flexible printed OTFT devices provides valuable insights into their employment in practical flexible electronics applications.

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