Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain

We report on the mechanical fatigue behavior of printed, organic, thin-film transistors (OTFTs) based on a polymer semiconductor, investigated by repeatedly applying strain to the flexible OTFT devices and assessing their electrical characteristics after 60,000 bending cycles. As part of our investi...

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Detalles Bibliográficos
Autores principales: Sekine, Tomohito, Kumaki, Daisuke, Tokito, Shizuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344584/
https://www.ncbi.nlm.nih.gov/pubmed/28772377
http://dx.doi.org/10.3390/ma10010018
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author Sekine, Tomohito
Kumaki, Daisuke
Tokito, Shizuo
author_facet Sekine, Tomohito
Kumaki, Daisuke
Tokito, Shizuo
author_sort Sekine, Tomohito
collection PubMed
description We report on the mechanical fatigue behavior of printed, organic, thin-film transistors (OTFTs) based on a polymer semiconductor, investigated by repeatedly applying strain to the flexible OTFT devices and assessing their electrical characteristics after 60,000 bending cycles. As part of our investigation, we established that the rates of reduction in source/drain currents in the OTFT device depended on bending directions. Our improved understanding of the mechanical fatigue behavior of the flexible printed OTFT devices provides valuable insights into their employment in practical flexible electronics applications.
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spelling pubmed-53445842017-07-28 Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain Sekine, Tomohito Kumaki, Daisuke Tokito, Shizuo Materials (Basel) Communication We report on the mechanical fatigue behavior of printed, organic, thin-film transistors (OTFTs) based on a polymer semiconductor, investigated by repeatedly applying strain to the flexible OTFT devices and assessing their electrical characteristics after 60,000 bending cycles. As part of our investigation, we established that the rates of reduction in source/drain currents in the OTFT device depended on bending directions. Our improved understanding of the mechanical fatigue behavior of the flexible printed OTFT devices provides valuable insights into their employment in practical flexible electronics applications. MDPI 2016-12-28 /pmc/articles/PMC5344584/ /pubmed/28772377 http://dx.doi.org/10.3390/ma10010018 Text en © 2016 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Sekine, Tomohito
Kumaki, Daisuke
Tokito, Shizuo
Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain
title Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain
title_full Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain
title_fullStr Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain
title_full_unstemmed Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain
title_short Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain
title_sort mechanical fatigue behavior of flexible printed organic thin-film transistors under applied strain
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344584/
https://www.ncbi.nlm.nih.gov/pubmed/28772377
http://dx.doi.org/10.3390/ma10010018
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