Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing

Five percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO(2)/SiO(2)/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) b...

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Autores principales: Xu, Hongtao, Wu, Changjin, Xiahou, Zhao, Jung, Ranju, Li, Ying, Liu, Chunli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344868/
https://www.ncbi.nlm.nih.gov/pubmed/28282975
http://dx.doi.org/10.1186/s11671-017-1949-4
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author Xu, Hongtao
Wu, Changjin
Xiahou, Zhao
Jung, Ranju
Li, Ying
Liu, Chunli
author_facet Xu, Hongtao
Wu, Changjin
Xiahou, Zhao
Jung, Ranju
Li, Ying
Liu, Chunli
author_sort Xu, Hongtao
collection PubMed
description Five percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO(2)/SiO(2)/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) behavior of the Pt/ZnO:Fe/Pt structures. Compared with the ZnO:Fe-0T film, the ZnO:Fe-4TP film showed improved RS performance regarding the stability of the set voltage and the resistance of the high resistance state. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the ZnO:Fe-4TP film contains more uniform grains and a higher density of oxygen vacancies, which promote the easier formation of conducting filaments along similar paths and the stability of switching parameters. These results suggest that external magnetic fields can be used to prepare magnetic oxide thin films with improved resistance switching performance for memory device applications.
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spelling pubmed-53448682017-03-21 Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing Xu, Hongtao Wu, Changjin Xiahou, Zhao Jung, Ranju Li, Ying Liu, Chunli Nanoscale Res Lett Nano Express Five percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO(2)/SiO(2)/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) behavior of the Pt/ZnO:Fe/Pt structures. Compared with the ZnO:Fe-0T film, the ZnO:Fe-4TP film showed improved RS performance regarding the stability of the set voltage and the resistance of the high resistance state. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the ZnO:Fe-4TP film contains more uniform grains and a higher density of oxygen vacancies, which promote the easier formation of conducting filaments along similar paths and the stability of switching parameters. These results suggest that external magnetic fields can be used to prepare magnetic oxide thin films with improved resistance switching performance for memory device applications. Springer US 2017-03-09 /pmc/articles/PMC5344868/ /pubmed/28282975 http://dx.doi.org/10.1186/s11671-017-1949-4 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Xu, Hongtao
Wu, Changjin
Xiahou, Zhao
Jung, Ranju
Li, Ying
Liu, Chunli
Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing
title Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing
title_full Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing
title_fullStr Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing
title_full_unstemmed Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing
title_short Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing
title_sort improved resistance switching stability in fe-doped zno thin films through pulsed magnetic field annealing
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344868/
https://www.ncbi.nlm.nih.gov/pubmed/28282975
http://dx.doi.org/10.1186/s11671-017-1949-4
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