Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing

Five percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO(2)/SiO(2)/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) b...

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Detalles Bibliográficos
Autores principales: Xu, Hongtao, Wu, Changjin, Xiahou, Zhao, Jung, Ranju, Li, Ying, Liu, Chunli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344868/
https://www.ncbi.nlm.nih.gov/pubmed/28282975
http://dx.doi.org/10.1186/s11671-017-1949-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344868/
https://www.ncbi.nlm.nih.gov/pubmed/28282975
http://dx.doi.org/10.1186/s11671-017-1949-4

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