ESR Study of (La,Ba)MnO(3)/ZnO Nanostructure for Resistive Switching Device

Structure, electric, and resonance properties of (La,Ba)MnO(3)/ZnO nanostructure grown on SrTiO(3) (001) substrate have been investigated. It is found that at room temperature and relatively low voltages (|V |< 0.2 V), the structure shows good rectification behavior with rectification factor near...

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Autores principales: Polek, Taras, Semen’ko, Mykhaylo, Endo, Tamio, Nakamura, Yoshinobu, Lotey, Gurmeet Singh, Tovstolytkin, Alexandr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344876/
https://www.ncbi.nlm.nih.gov/pubmed/28282983
http://dx.doi.org/10.1186/s11671-017-1961-8
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author Polek, Taras
Semen’ko, Mykhaylo
Endo, Tamio
Nakamura, Yoshinobu
Lotey, Gurmeet Singh
Tovstolytkin, Alexandr
author_facet Polek, Taras
Semen’ko, Mykhaylo
Endo, Tamio
Nakamura, Yoshinobu
Lotey, Gurmeet Singh
Tovstolytkin, Alexandr
author_sort Polek, Taras
collection PubMed
description Structure, electric, and resonance properties of (La,Ba)MnO(3)/ZnO nanostructure grown on SrTiO(3) (001) substrate have been investigated. It is found that at room temperature and relatively low voltages (|V |< 0.2 V), the structure shows good rectification behavior with rectification factor near 210. Resistive switching properties are detected after application of higher voltages. Temperature evolution of magnetic phase composition of the sample is analyzed in detail, based on results of electron spin resonance measurements. It is shown that magnetic state below 260 K is characterized by coexistence of ferromagnetic and paramagnetic phases, but no evidence of magnetic phase separation is revealed at higher temperatures. Different driving mechanisms for resistive switching, such as magnetic phase separation and/or electric field-induced migration of oxygen vacancies, are discussed in the context of obtained results.
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spelling pubmed-53448762017-03-21 ESR Study of (La,Ba)MnO(3)/ZnO Nanostructure for Resistive Switching Device Polek, Taras Semen’ko, Mykhaylo Endo, Tamio Nakamura, Yoshinobu Lotey, Gurmeet Singh Tovstolytkin, Alexandr Nanoscale Res Lett Nano Express Structure, electric, and resonance properties of (La,Ba)MnO(3)/ZnO nanostructure grown on SrTiO(3) (001) substrate have been investigated. It is found that at room temperature and relatively low voltages (|V |< 0.2 V), the structure shows good rectification behavior with rectification factor near 210. Resistive switching properties are detected after application of higher voltages. Temperature evolution of magnetic phase composition of the sample is analyzed in detail, based on results of electron spin resonance measurements. It is shown that magnetic state below 260 K is characterized by coexistence of ferromagnetic and paramagnetic phases, but no evidence of magnetic phase separation is revealed at higher temperatures. Different driving mechanisms for resistive switching, such as magnetic phase separation and/or electric field-induced migration of oxygen vacancies, are discussed in the context of obtained results. Springer US 2017-03-09 /pmc/articles/PMC5344876/ /pubmed/28282983 http://dx.doi.org/10.1186/s11671-017-1961-8 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Polek, Taras
Semen’ko, Mykhaylo
Endo, Tamio
Nakamura, Yoshinobu
Lotey, Gurmeet Singh
Tovstolytkin, Alexandr
ESR Study of (La,Ba)MnO(3)/ZnO Nanostructure for Resistive Switching Device
title ESR Study of (La,Ba)MnO(3)/ZnO Nanostructure for Resistive Switching Device
title_full ESR Study of (La,Ba)MnO(3)/ZnO Nanostructure for Resistive Switching Device
title_fullStr ESR Study of (La,Ba)MnO(3)/ZnO Nanostructure for Resistive Switching Device
title_full_unstemmed ESR Study of (La,Ba)MnO(3)/ZnO Nanostructure for Resistive Switching Device
title_short ESR Study of (La,Ba)MnO(3)/ZnO Nanostructure for Resistive Switching Device
title_sort esr study of (la,ba)mno(3)/zno nanostructure for resistive switching device
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5344876/
https://www.ncbi.nlm.nih.gov/pubmed/28282983
http://dx.doi.org/10.1186/s11671-017-1961-8
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