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Noninvasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization

[Image: see text] Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane-based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressu...

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Detalles Bibliográficos
Autores principales: Wagner, Stefan, Dieing, Thomas, Centeno, Alba, Zurutuza, Amaia, Smith, Anderson D., Östling, Mikael, Kataria, Satender, Lemme, Max C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5345116/
https://www.ncbi.nlm.nih.gov/pubmed/28140595
http://dx.doi.org/10.1021/acs.nanolett.6b04546
Descripción
Sumario:[Image: see text] Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane-based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure-sensor applications. The development of such devices requires suitable metrology methods, i.e., large-scale characterization techniques, to confirm and analyze successful graphene transfer with intact suspended graphene membranes. We propose fast and noninvasive Raman spectroscopy mapping to distinguish between free-standing and substrate-supported graphene, utilizing the different strain and doping levels. The technique is expanded to combine two-dimensional area scans with cross-sectional Raman spectroscopy, resulting in three-dimensional Raman tomography of membrane-based graphene NEMS. The potential of Raman tomography for in-line monitoring is further demonstrated with a methodology for automated data analysis to spatially resolve the material composition in micrometer-scale integrated devices, including free-standing and substrate-supported graphene. Raman tomography may be applied to devices composed of other two-dimensional materials as well as silicon micro- and nanoelectromechanical systems.