Cargando…
Multicolor emission from intermediate band semiconductor ZnO(1−x)Se(x)
Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associa...
Autores principales: | Welna, M., Baranowski, M., Linhart, W. M., Kudrawiec, R., Yu, K. M., Mayer, M., Walukiewicz, W. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5347037/ https://www.ncbi.nlm.nih.gov/pubmed/28287140 http://dx.doi.org/10.1038/srep44214 |
Ejemplares similares
-
Nitrogen-related intermediate band in P-rich GaN(x)P(y)As(1−x−y) alloys
por: Zelazna, K., et al.
Publicado: (2017) -
Fabrication and characterization of ZnO/Se(1-x)Te(x) solar cells
por: Zheng, Jiajia, et al.
Publicado: (2022) -
ZnO/MoX(2) (X = S, Se) composites used for visible light photocatalysis
por: Wang, Guangzhao, et al.
Publicado: (2018) -
Facile synthesis of composition-tuned ZnO/Zn(x)Cd(1-x)Se nanowires for photovoltaic applications
por: Luo, Qiang, et al.
Publicado: (2015) -
Band to Band Tunneling at the Zinc Oxide (ZnO) and Lead Selenide (PbSe) Quantum Dot Contact; Interfacial Charge Transfer at a ZnO/PbSe/ZnO Probe Device
por: Kim, Minkyong, et al.
Publicado: (2019)