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Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)(5...

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Detalles Bibliográficos
Autores principales: Wang, Xiao, Wang, Wei, Wang, Jingli, Wu, Hao, Liu, Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5349601/
https://www.ncbi.nlm.nih.gov/pubmed/28290480
http://dx.doi.org/10.1038/srep44223
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author Wang, Xiao
Wang, Wei
Wang, Jingli
Wu, Hao
Liu, Chang
author_facet Wang, Xiao
Wang, Wei
Wang, Jingli
Wu, Hao
Liu, Chang
author_sort Wang, Xiao
collection PubMed
description P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)(5)/(GaN)(1) superlattice (SL) in Al(0.83)Ga(0.17)N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as Mg(Ga) δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using Mg(Ga) δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.
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spelling pubmed-53496012017-03-17 Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice Wang, Xiao Wang, Wei Wang, Jingli Wu, Hao Liu, Chang Sci Rep Article P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)(5)/(GaN)(1) superlattice (SL) in Al(0.83)Ga(0.17)N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as Mg(Ga) δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using Mg(Ga) δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN. Nature Publishing Group 2017-03-14 /pmc/articles/PMC5349601/ /pubmed/28290480 http://dx.doi.org/10.1038/srep44223 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Wang, Xiao
Wang, Wei
Wang, Jingli
Wu, Hao
Liu, Chang
Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice
title Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice
title_full Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice
title_fullStr Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice
title_full_unstemmed Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice
title_short Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice
title_sort experimental evidences for reducing mg activation energy in high al-content algan alloy by mg(ga) δ doping in (aln)(m)/(gan)(n) superlattice
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5349601/
https://www.ncbi.nlm.nih.gov/pubmed/28290480
http://dx.doi.org/10.1038/srep44223
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