Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)(5...

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Detalles Bibliográficos
Autores principales: Wang, Xiao, Wang, Wei, Wang, Jingli, Wu, Hao, Liu, Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5349601/
https://www.ncbi.nlm.nih.gov/pubmed/28290480
http://dx.doi.org/10.1038/srep44223

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5349601/
https://www.ncbi.nlm.nih.gov/pubmed/28290480
http://dx.doi.org/10.1038/srep44223

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