Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

A detailed mechanism for heteroepitaxial diamond nucleation under ion bombardment in a microwave plasma enhanced chemical vapour deposition setup on the single crystal surface of iridium is presented. The novel mechanism of Ion Bombardment Induced Buried Lateral Growth (IBI-BLG) is based on the ion...

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Detalles Bibliográficos
Autores principales: Schreck, Matthias, Gsell, Stefan, Brescia, Rosaria, Fischer, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353677/
https://www.ncbi.nlm.nih.gov/pubmed/28294167
http://dx.doi.org/10.1038/srep44462

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353677/
https://www.ncbi.nlm.nih.gov/pubmed/28294167
http://dx.doi.org/10.1038/srep44462

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