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Tuning Coupling Behavior of Stacked Heterostructures Based on MoS(2), WS(2), and WSe(2)
The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is fo...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5356184/ https://www.ncbi.nlm.nih.gov/pubmed/28303932 http://dx.doi.org/10.1038/srep44712 |
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author | Wang, Fang Wang, Junyong Guo, Shuang Zhang, Jinzhong Hu, Zhigao Chu, Junhao |
author_facet | Wang, Fang Wang, Junyong Guo, Shuang Zhang, Jinzhong Hu, Zhigao Chu, Junhao |
author_sort | Wang, Fang |
collection | PubMed |
description | The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is found that MoS(2)-WS(2), MoS(2)-WSe(2), and WS(2)-WSe(2) heterostructures turn into direct-gap semiconductors from indirect-gap semiconductors with increasing the interlayer space. Moreover, the electronic structure changing process with interlayer spacing of MoS(2)-WS(2), MoS(2)-WSe(2), and WS(2)-WSe(2) is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS(2)-WS(2), MoS(2)-WSe(2), and WS(2)-WSe(2) have been demonstrated. The transition transformation from indirect to direct can be only observed in the MoS(2)-WS(2) heterostructure, as the valence band maximum (VBM) at the Γ point in the MoS(2)-WSe(2) and WS(2)-WSe(2) heterostructure is less sensitive to the interlayer spacing than those from the MoS(2)-WS(2) heterostructure. The present work highlights the significance of the temperature tuning in interlayer coupling and advance the research of MoS(2)-WS(2), MoS(2)-WSe(2), and WS(2)-WSe(2) based device applications. |
format | Online Article Text |
id | pubmed-5356184 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-53561842017-03-22 Tuning Coupling Behavior of Stacked Heterostructures Based on MoS(2), WS(2), and WSe(2) Wang, Fang Wang, Junyong Guo, Shuang Zhang, Jinzhong Hu, Zhigao Chu, Junhao Sci Rep Article The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is found that MoS(2)-WS(2), MoS(2)-WSe(2), and WS(2)-WSe(2) heterostructures turn into direct-gap semiconductors from indirect-gap semiconductors with increasing the interlayer space. Moreover, the electronic structure changing process with interlayer spacing of MoS(2)-WS(2), MoS(2)-WSe(2), and WS(2)-WSe(2) is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS(2)-WS(2), MoS(2)-WSe(2), and WS(2)-WSe(2) have been demonstrated. The transition transformation from indirect to direct can be only observed in the MoS(2)-WS(2) heterostructure, as the valence band maximum (VBM) at the Γ point in the MoS(2)-WSe(2) and WS(2)-WSe(2) heterostructure is less sensitive to the interlayer spacing than those from the MoS(2)-WS(2) heterostructure. The present work highlights the significance of the temperature tuning in interlayer coupling and advance the research of MoS(2)-WS(2), MoS(2)-WSe(2), and WS(2)-WSe(2) based device applications. Nature Publishing Group 2017-03-17 /pmc/articles/PMC5356184/ /pubmed/28303932 http://dx.doi.org/10.1038/srep44712 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Wang, Fang Wang, Junyong Guo, Shuang Zhang, Jinzhong Hu, Zhigao Chu, Junhao Tuning Coupling Behavior of Stacked Heterostructures Based on MoS(2), WS(2), and WSe(2) |
title | Tuning Coupling Behavior of Stacked Heterostructures Based on MoS(2), WS(2), and WSe(2) |
title_full | Tuning Coupling Behavior of Stacked Heterostructures Based on MoS(2), WS(2), and WSe(2) |
title_fullStr | Tuning Coupling Behavior of Stacked Heterostructures Based on MoS(2), WS(2), and WSe(2) |
title_full_unstemmed | Tuning Coupling Behavior of Stacked Heterostructures Based on MoS(2), WS(2), and WSe(2) |
title_short | Tuning Coupling Behavior of Stacked Heterostructures Based on MoS(2), WS(2), and WSe(2) |
title_sort | tuning coupling behavior of stacked heterostructures based on mos(2), ws(2), and wse(2) |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5356184/ https://www.ncbi.nlm.nih.gov/pubmed/28303932 http://dx.doi.org/10.1038/srep44712 |
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