Investigation on the corrosive effect of NH(3) during InGaN/GaN multi-quantum well growth in light emitting diodes

Three series of samples with different NH(3) flow rate are grown and the optical and structural properties are investigated. It is found that apart from a positive effect on keeping a high partial pressure of nitrogen to enhance indium incorporation, NH(3) may also play a negative effect on indium i...

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Detalles Bibliográficos
Autores principales: Yang, J., Zhao, D. G., Jiang, D. S., Chen, P., Zhu, J. J., Liu, Z. S., Liu, W., Li, X., Liang, F., Liu, S. T., Zhang, L. Q., Yang, H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5359590/
https://www.ncbi.nlm.nih.gov/pubmed/28322286
http://dx.doi.org/10.1038/srep44850
Descripción
Sumario:Three series of samples with different NH(3) flow rate are grown and the optical and structural properties are investigated. It is found that apart from a positive effect on keeping a high partial pressure of nitrogen to enhance indium incorporation, NH(3) may also play a negative effect on indium incorporation during InGaN growth. Especially, when temperature is relatively high, the hydrogen generated from the dissociation of NH(3) may suppress the chemical reaction which produces InN, leading to a reduced indium incorporation efficiency during the InGaN layer growth.

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