Surface engineering to achieve organic ternary memory with a high device yield and improved performance

Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distributi...

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Detalles Bibliográficos
Autores principales: Hou, Xiang, Xiao, Xin, Zhou, Qian-Hao, Cheng, Xue-Feng, He, Jing-Hui, Xu, Qing-Feng, Li, Hua, Li, Na-Jun, Chen, Dong-Yun, Lu, Jian-Mei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2017
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5364995/
https://www.ncbi.nlm.nih.gov/pubmed/28451339
http://dx.doi.org/10.1039/c6sc03986c
Descripción
Sumario:Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.

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