Surface engineering to achieve organic ternary memory with a high device yield and improved performance

Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distributi...

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Detalles Bibliográficos
Autores principales: Hou, Xiang, Xiao, Xin, Zhou, Qian-Hao, Cheng, Xue-Feng, He, Jing-Hui, Xu, Qing-Feng, Li, Hua, Li, Na-Jun, Chen, Dong-Yun, Lu, Jian-Mei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2017
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5364995/
https://www.ncbi.nlm.nih.gov/pubmed/28451339
http://dx.doi.org/10.1039/c6sc03986c
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author Hou, Xiang
Xiao, Xin
Zhou, Qian-Hao
Cheng, Xue-Feng
He, Jing-Hui
Xu, Qing-Feng
Li, Hua
Li, Na-Jun
Chen, Dong-Yun
Lu, Jian-Mei
author_facet Hou, Xiang
Xiao, Xin
Zhou, Qian-Hao
Cheng, Xue-Feng
He, Jing-Hui
Xu, Qing-Feng
Li, Hua
Li, Na-Jun
Chen, Dong-Yun
Lu, Jian-Mei
author_sort Hou, Xiang
collection PubMed
description Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.
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spelling pubmed-53649952017-04-27 Surface engineering to achieve organic ternary memory with a high device yield and improved performance Hou, Xiang Xiao, Xin Zhou, Qian-Hao Cheng, Xue-Feng He, Jing-Hui Xu, Qing-Feng Li, Hua Li, Na-Jun Chen, Dong-Yun Lu, Jian-Mei Chem Sci Chemistry Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity. Royal Society of Chemistry 2017-03-01 2016-12-15 /pmc/articles/PMC5364995/ /pubmed/28451339 http://dx.doi.org/10.1039/c6sc03986c Text en This journal is © The Royal Society of Chemistry 2017 http://creativecommons.org/licenses/by/3.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution 3.0 Unported License (http://creativecommons.org/licenses/by/3.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Chemistry
Hou, Xiang
Xiao, Xin
Zhou, Qian-Hao
Cheng, Xue-Feng
He, Jing-Hui
Xu, Qing-Feng
Li, Hua
Li, Na-Jun
Chen, Dong-Yun
Lu, Jian-Mei
Surface engineering to achieve organic ternary memory with a high device yield and improved performance
title Surface engineering to achieve organic ternary memory with a high device yield and improved performance
title_full Surface engineering to achieve organic ternary memory with a high device yield and improved performance
title_fullStr Surface engineering to achieve organic ternary memory with a high device yield and improved performance
title_full_unstemmed Surface engineering to achieve organic ternary memory with a high device yield and improved performance
title_short Surface engineering to achieve organic ternary memory with a high device yield and improved performance
title_sort surface engineering to achieve organic ternary memory with a high device yield and improved performance
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5364995/
https://www.ncbi.nlm.nih.gov/pubmed/28451339
http://dx.doi.org/10.1039/c6sc03986c
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