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Surface engineering to achieve organic ternary memory with a high device yield and improved performance
Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distributi...
Autores principales: | Hou, Xiang, Xiao, Xin, Zhou, Qian-Hao, Cheng, Xue-Feng, He, Jing-Hui, Xu, Qing-Feng, Li, Hua, Li, Na-Jun, Chen, Dong-Yun, Lu, Jian-Mei |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Royal Society of Chemistry
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5364995/ https://www.ncbi.nlm.nih.gov/pubmed/28451339 http://dx.doi.org/10.1039/c6sc03986c |
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