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III-nitride core–shell nanorod array on quartz substrates

We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer...

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Detalles Bibliográficos
Autores principales: Bae, Si-Young, Min, Jung-Wook, Hwang, Hyeong-Yong, Lekhal, Kaddour, Lee, Ho-Jun, Jho, Young-Dahl, Lee, Dong-Seon, Lee, Yong-Tak, Ikarashi, Nobuyuki, Honda, Yoshio, Amano, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5366955/
https://www.ncbi.nlm.nih.gov/pubmed/28345641
http://dx.doi.org/10.1038/srep45345
Descripción
Sumario:We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core–shell nanorods were then investigated. The nanorods were highly crystalline and the core–shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.