Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO T...

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Detalles Bibliográficos
Autores principales: Li, Huijin, Han, Dedong, Liu, Liqiao, Dong, Junchen, Cui, Guodong, Zhang, Shengdong, Zhang, Xing, Wang, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5366990/
https://www.ncbi.nlm.nih.gov/pubmed/28347129
http://dx.doi.org/10.1186/s11671-017-1999-7
Descripción
Sumario:This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O(2) at 300 °C exhibit a low leakage current of 2.5 × 10(−13)A, I (on)/I (off) ratio of 1.4 × 10(7), subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

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