Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO T...

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Detalles Bibliográficos
Autores principales: Li, Huijin, Han, Dedong, Liu, Liqiao, Dong, Junchen, Cui, Guodong, Zhang, Shengdong, Zhang, Xing, Wang, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5366990/
https://www.ncbi.nlm.nih.gov/pubmed/28347129
http://dx.doi.org/10.1186/s11671-017-1999-7
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author Li, Huijin
Han, Dedong
Liu, Liqiao
Dong, Junchen
Cui, Guodong
Zhang, Shengdong
Zhang, Xing
Wang, Yi
author_facet Li, Huijin
Han, Dedong
Liu, Liqiao
Dong, Junchen
Cui, Guodong
Zhang, Shengdong
Zhang, Xing
Wang, Yi
author_sort Li, Huijin
collection PubMed
description This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O(2) at 300 °C exhibit a low leakage current of 2.5 × 10(−13)A, I (on)/I (off) ratio of 1.4 × 10(7), subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.
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spelling pubmed-53669902017-04-12 Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique Li, Huijin Han, Dedong Liu, Liqiao Dong, Junchen Cui, Guodong Zhang, Shengdong Zhang, Xing Wang, Yi Nanoscale Res Lett Nano Express This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O(2) at 300 °C exhibit a low leakage current of 2.5 × 10(−13)A, I (on)/I (off) ratio of 1.4 × 10(7), subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster. Springer US 2017-03-24 /pmc/articles/PMC5366990/ /pubmed/28347129 http://dx.doi.org/10.1186/s11671-017-1999-7 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Li, Huijin
Han, Dedong
Liu, Liqiao
Dong, Junchen
Cui, Guodong
Zhang, Shengdong
Zhang, Xing
Wang, Yi
Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
title Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
title_full Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
title_fullStr Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
title_full_unstemmed Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
title_short Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
title_sort bi-layer channel azo/zno thin film transistors fabricated by atomic layer deposition technique
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5366990/
https://www.ncbi.nlm.nih.gov/pubmed/28347129
http://dx.doi.org/10.1186/s11671-017-1999-7
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