The Study of Electrical Properties for Multilayer La(2)O(3)/Al(2)O(3) Dielectric Stacks and LaAlO(3) Dielectric Film Deposited by ALD

The capacitance and leakage current properties of multilayer La(2)O(3)/Al(2)O(3) dielectric stacks and LaAlO(3) dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La(2)O(3)/Al(2)O(3) stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO(3) dielectric film, compared with multilayer La(2)O(3)/Al(2)O(3) dielectric stacks, a clear promotion of trapped charges density (N (ot)) and a degradation of interface trap density (D (it)) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO(3) dielectric film compared with multilayer La(2)O(3)/Al(2)O(3) stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La(2)O(3)/Al(2)O(3) stack is achieved after annealing at a higher temperature for its less defects.